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1 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 15 16 17 18 19 20 21 22 23 24 25 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) power (dbm) -25 -20 -15 -10 -5 0 5 10 15 20 25 18 20 22 24 26 28 30 32 34 36 38 40 frequency (ghz) s-parameters (db) key features ? frequency range: 19 - 38 ghz ? 20 db nominal gain ? 22 dbm nominal psat ? 30 dbm nominal toi ? bias: 5 v, 160 ma (210ma @ p1db) ? 0.25 um 3mi phemt technology ? chip dimensions 1.69 x 0.75 x 0.10 mm (0.066 x 0.030 x 0.004 in) primary applications ? point-to-point radio ? point-to-multipoint communications ? instrumentation measured fixtured data bias conditions: vd = 5 v, id = 160 ma p1db psat product description the triquint TGA4036 is a compact medium power amplifier mmic for wide-band applications. the part is designed using triquint?s proven standard 0.25 um power phemt production process. the TGA4036 provides a nominal 20 db gain from 19-36 ghz, with saturated output power of 22 dbm. the part is ideally suited for low cost emerging markets such as point-to-point radio, point-to- multi point communications, and instrumentation. the TGA4036 is 100% dc and rf tested on- wafer to ensure performance compliance. evaluation boards are available. orl irl gain 19 - 38 ghz medium power amplifier datasheet subject to change without notice
2 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter value notes vd drain voltage 7 v 2 / vg gate voltage range -1 to +0.5 v id drain current 400 ma 2 / 3 / ?ig ? gate current 7 ma 3 / p in input continuous wave power 20 dbm p d power dissipation 2.5 w 2 / 4 / t ch operating channel temperature 200c 5 / 6 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4 / when operated at this bias condition with a base plate temperature of 70 c, the median life is 2.3e4 hrs. 5 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6 / these ratings apply to each individual fet. q1a and q1b are 150um input fets table ii dc probe test (ta = 25 c) symbol parameter minimum maximum unit idss (q1a) saturated drain current 15 94 ma gm (q1a) transconductance 33 106 ms vp (q1) pinch-off voltage -1.5 -0.5 v bvgs (q1a) breakdown voltage gate-source -30 -8 v bvgd (q1a,q1b) breakdown voltage gate-drain -30 -10 v
3 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii electrical characteristics (ta = 25 0 c nominal) parameter typical units frequency range 19 - 38 ghz drain voltage, vd 5.0 v drain current, id 160 ma gate voltage, vg -0.6 v small signal gain, s21 20 db input return loss, s11 11 db output return loss, s22 8 db output power @ 1db gain compression, p1db 21 dbm saturated output power, psat 22 dbm output toi @ pin/tone = -10dbm 30 dbm temperature coefficient 0.038 db/ 0 c
4 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch (c) jc (c/w) tm (hrs) jc thermal resistance (channel to case) vd = 5 v id = 160 ma pdiss = 0.80 w 112 51.9 3.4e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 0 2 4 6 8 10 12 14 16 18 20 22 24 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) gain (db) preliminary measured data bias conditions: vd = 5 v, idq = 160 ma 0 2 4 6 8 10 12 14 16 18 20 22 24 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) gain over temperature (db) -40c -20c 0c 20c 40c 60c 80c
6 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary measured data bias conditions: vd = 5 v, idq = 160 ma -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) input return loss (db) -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) output return loss (db)
7 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 4 6 8 10 12 14 16 18 20 22 24 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 pin (dbm) power (dbm) & gain (db) 160 170 180 190 200 210 220 230 240 250 260 id (ma) 15 16 17 18 19 20 21 22 23 24 25 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) power (dbm) ` preliminary measured data bias conditions: vd = 5 v, idq = 160 ma psat p1db gain pout id @ 29 ghz
8 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 0 10 20 30 40 50 60 45678910111213141516 ouput power/tone (dbm) imd3 (dbc) 19ghz 25ghz 30ghz 36ghz 0 5 10 15 20 25 30 35 40 16 18 20 22 24 26 28 30 32 34 36 38 40 42 frequency (ghz) output toi @ pin/tone = -10dbm (dbm) preliminary measured data bias conditions: vd = 5 v, idq = 160 ma
9 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 1 2 3 4 5 6 0 0 0.299 (0.011) 1.065 (0.042) 1.603 (0.063) 1.688 (0.066) 0.389 (0.015) 0.665 (0.026) 1.328 (0.052) 0.593 (0.023) 0.085 (0.003) 0.750 (0.030) 0.445 (0.018) 0.085 (0.003) units: millimeters (inches) thickness: 0.100 (0.004) (reference only) cip edge to bond pad dimensions ar e shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) rf ground is backside of mmic bond pad #1: bond pad #2, #3: bond pad #4: bond pad #5, #6: (rf in) (vd) (rf out) (vg) 0.080 x 0.150 (0.003 x 0.006) 0.080 x 0.080 (0.003 x 0.003) 0.080 x 0.150 (0.003 x 0.006) 0.080 x 0.080 (0.003 x 0.003)
10 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com recommended chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. adjust vg to get id = 160ma rf in rf out vd = 5v vg~-0.6v ribbon ribbon
11 TGA4036 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c.

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